NDD03N80Z Datasheet, PDF (1/8 Pages) ON Semiconductor – N.Channel Power MOSFET

NDD03N80Z, NDF03N80Z
N‐Channel Power MOSFET
800 V, 4.5 W
Features
• ESD Diode−Protected Gate
• 100% Avalanche Tested
• 100% Rg Tested
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol NDD NDF Unit
Drain−to−Source Voltage
Continuous Drain Current R_qJC
V_DSS
I_D
800
V
2.9
3.3
A
(Note 1)
Continuous Drain Current
R_qJC, T_A = 100°C
Pulsed Drain Current, V_GS @ 10 V
Power Dissipation R_qJC
Gate−to−Source Voltage
Single Pulse Avalanche Energy, I_D =
2.5 A
I_D
1.9
2.1
A
(Note 1)
I_DM
12
13
A
P_D
96
25
W
V_GS
±30
V
E_AS
100
mJ
ESD (HBM) (JESD22−A114)
RMS Isolation Voltage (t = 0.3 sec.,
R.H. ≤ 30%, T_A = 25°C) (Figure 14)
Peak Diode Recovery (Note 2)
V_esd
V_ISO
dv/dt
2300
V
4500 V
4.5
V/ns
Continuous Source Current
(Body Diode)
I_S
3.3
A
Maximum Temperature for Soldering
T_L
Leads
260
°C
Operating Junction and
Storage Temperature Range
T_J, T_stg
−55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. I_S = 3.3 A, di/dt ≤ 100 A/ms, V_DD ≤ BV_DSS, T_J = +150°C
http://onsemi.com
V_(BR)DSS
800 V
R_DS(ON) MAX
4.5 W @ 10 V
N-Channel
D (2)
G (1)
S (3)
4
1
2
3
NDF03N80ZH
TO−220FP
CASE 221AH
1
2
3
NDD03N80Z−1G
IPAK
CASE 369D
4
12
3
NDD03N80ZT4G
DPAK
CASE 369AA
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
August, 2012 − Rev. 0
Publication Order Number:
NDD03N80Z/D