NDD02N40 Datasheet, PDF (1/9 Pages) ON Semiconductor – N-Channel Power MOSFET

NDD02N40, NDT02N40
N-Channel Power MOSFET
400 V, 5.5 W
Features
• 100% Avalanche Tested
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol NDD NDT Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current R_qJC
Steady State, T_C = 25°C (Note 1)
Continuous Drain Current R_qJC
Steady State, T_C = 100°C (Note 1)
Power Dissipation – R_qJC
Steady State, T_C = 25°C
Pulsed Drain Current
Continuous Source Current (Body
Diode)
V_DSS
V_GS
I_D
I_D
P_D
I_DM
I_S
400
V
±20
V
1.7 0.4 A
1.1 0.25 A
39 2.0 W
6.9 1.6 A
1.7 0.4 A
Single Pulse Drain−to−Source
Avalanche Energy, I_D = 1 A
Maximum Temperature for Soldering
Leads
EAS
T_L
120
mJ
260
°C
Operating Junction and Storage
Temperature
T_J, T_STG −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature
2. I_S = 1.7 A, di/dt ≤ 100 A/ms, V_DD ≤ BV_DSS, T_J = +150°C
THERMAL RESISTANCE
Parameter
Symbol Value Unit
Junction−to−Case (Drain)
NDD02N40
Junction−to−Ambient Steady State
NDD02N40 (Note 4)
NDD02N40−1 (Note 3)
NDT02N40 (Note 4)
NDT02N40 (Note 5)
R_qJC
R_qJA
3.2 °C/W
°C/W
39
96
62
151
3. Insertion mounted
4. Surface mounted on FR4 board using 1″ sq. pad size
(Cu area = 1.127″ sq. [2 oz] including traces)
5. Surface−mounted on FR4 board using minimum recommended pad size
(Cu area = 0.026” sq. [2 oz]).
© Semiconductor Components Industries, LLC, 2014
1
July, 2014 − Rev. 4
http://onsemi.com
V_(BR)DSS
400 V
R_DS(ON) MAX
5.5 W @ 10 V
N−Channel MOSFET
D (2)
G (1)
S (3)
MARKING
DIAGRAMS
4
Drain
12
3
4
DPAK
CASE 369C
(Surface Mount)
STYLE 2
1
Gate
2
Drain
3
Source
4
Drain
4
IPAK
CASE 369D
(Straight Lead)
1
2
3
Y
WW
2N40
STYLE 2
= Year
= Work Week
= Device Code
12 3
Gate Drain Source
G
= Pb−Free Package
1 ₂₃
A
Y
W
2N40
Drain
4
SOT−223
4
CASE 318E
STYLE 3
AYW
2N40G
= Assembly Location
G
= Year
12 3
= Work Week
= Specific Device Code
Gate Drain Source
G
= Pb−Free Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Publication Order Number:
NDD02N40/D