NDBA180N10B Datasheet, PDF (1/6 Pages) ON Semiconductor – N-Channel Power MOSFET

NDBA180N10B
Power MOSFET
100V, 2.8mΩ, 180A, N-Channel
www.onsemi.com
Features
• Ultra Low On-Resistance
• Low Gate Charge
• High Speed Switching
• 100% Avalanche Tested
• Pb-Free, Halogen Free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (DC) Limited by Package
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
Power Dissipation
Tc=25°C
VDSS
VGSS
ID
IDL
IDP
PD
Junction Temperature
Tj
Storage Temperature
Tstg
Source Current (Body Diode)
Avalanche Energy (Single Pulse) *¹
Lead Temperature for Soldering
Purposes, 3mm from Case for 10 Seconds
IS
EAS
TL
Value
Unit
100
V
±20
V
180
A
100
A
600
A
200
W
175
°C
−55 to +175
°C
100
A
451
mJ
260
°C
VDSS
100V
RDS(on) Max
2.8mΩ@ 15V
3.3mΩ@ 10V
ID _Max
180A
Electrical Connection
N-Channel
2,4
1 : Gate
1
2 : Drain
3 : Source
4 : Drain
3
Marking
Thermal Resistance Ratings
Parameter
Symbol
Value
Junction to Case Steady State
R_θJC
0.75
Junction to Ambient *²
R_θJA
62.5
Note : *¹ VDD=48V, L=100μH, IAV=70A (Fig.1)
*² Surface mounted on FR4 board using recommended footprint
Unit
°C/W
Packing Type:TL
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ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
March 2015 - Rev. 3
Publication Order Number :
NDBA180N10B/D