NDBA170N06A Datasheet, PDF (1/6 Pages) ON Semiconductor – N-Channel Power MOSFET

Ordering number : ENA2250
NDBA170N06A
N-Channel Power MOSFET
60V, 170A, 3.3mΩ, TO-263
Features
• On-resistance RDS(on)=2.5mΩ(typ.)
• Input Capacitance Ciss=15800pF(typ.)
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Drain to Source Voltage
VDSS
Gate to Source Voltage
Drain Current (DC)
Drain Current (DC) Limited by Package
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
Power Dissipation
Tc=25°C
VGSS
ID
IDL
IDP
PD
Junction Temperature
Tj
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *¹
Avalanche Current *²
Lead Temperature for Soldering
Purposes, 3mm from Case for 10 Seconds
EAS
IAV
TL
Value
Unit
60
V
±20
V
170
A
100
A
600
A
90
W
150
°C
- 55 to
°C
+150
571
mJ
70
A
260
°C
Thermal Resistance Ratings
Parameter
Junction- to-Case(Drain) Steady State
Junction-to-Ambient *³
Symbol
R_θJC
R_θJA
Value
1.39
62.5
Unit
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Note : *¹ VDD=36V, L=100μH, IAV=70A (Fig.1)
*² L≤100μH, Single Pulse
*³ Surface mounted on FR4 board using recommended footprint
http://onsemi.com
Electrical Connection
N-channel
D(2, 4)
G(1)
S(3)
4
12
3
TO-263
CASE 418AJ
Marking
170N06
A ^{LOT No.}
Packing Type:TL
TL
Ordering & Package Information
Device
NDBA170N06AT4H
Pb-free and
Halogen Free
Package
TO-263
Shipping
800
pcs. / reel
Semiconductor Components Industries, LLC, 2013
December, 2013
D1113 TKIM TC-00003075 No. A2250-1/6