NDBA100N10B Datasheet, PDF (1/5 Pages) ON Semiconductor – N-Channel Power MOSFET

NDBA100N10B
Power MOSFET
100V, 6.9mΩ, 100A, N-Channel
www.onsemi.com
Features
• Low On-Resistance
• Low Gate Charge
• High Speed Switching
• 100% Avalanche Tested
• Pb-Free, Halogen Free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
Power Dissipation
Tc=25°C
Junction Temperature
Storage Temperature
Source Current (Body Diode)
Avalanche Energy (Single Pulse) *¹
Lead Temperature for Soldering
Purposes, 3mm from Case for 10 Seconds
Symbol
VDSS
VGSS
ID
IDP
PD
Tj
Tstg
IS
EAS
TL
Value
Unit
100
V
±20
V
100
A
400
A
110
W
175
°C
−55 to +175
°C
100
A
147
mJ
260
°C
VDSS
100V
RDS(on) Max
6.9 mΩ@15V
8.2 mΩ@10V
ID _Max
100A
Electrical Connection
N-Channel
2, 4
1
3
4
12
3
TO-263
CASE 418AJ
1 : Gate
2 : Drain
3 : Source
4 : Drain
Marking
100N10
B ^{LOT No.}
Thermal Resistance Ratings
Parameter
Symbol
Value
Junction to Case Steady State
R_θJC
1.36
Junction to Ambient *²
R_θJA
62.5
Note : *¹ VDD=48V, L=100μH, IAV=40A (Fig.1)
*² Surface mounted on FR4 board using recommended footprint
Unit
°C/W
Packing Type : TL
TL
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
March 2015 - Rev. 1
Publication Order Number :
NDBA100N10B/D