NCV8440_16 Datasheet, PDF (1/9 Pages) ON Semiconductor – Protected Power MOSFET

NCV8440, NCV8440A
Protected Power MOSFET
2.6 A, 52 V, N−Channel, Logic Level,
Clamped MOSFET w/ ESD Protection
Features
• Diode Clamp Between Gate and Source
• ESD Protection − Human Body Model 5000 V
• Active Over−Voltage Gate to Drain Clamp
• Scalable to Lower or Higher R_DS(on)
• Internal Series Gate Resistance
• These are Pb−Free Devices
Benefits
• High Energy Capability for Inductive Loads
• Low Switching Noise Generation
Applications
• Automotive and Industrial Markets:
Solenoid Drivers, Lamp Drivers, Small Motor Drivers
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
www.onsemi.com
V_DSS
(Clamped)
52 V
R_DS(ON) TYP
95 mW @ 10 V
I_D MAX
2.6 A
Drain (Pins 2, 4)
Gate
(Pin 1)
Overvoltage
Protection
ESD Protection
Source (Pin 3)
MARKING
DIAGRAM
DRAIN
SOT−223
CASE 318E
STYLE 3
1 = Gate
2 = Drain
3 = Source
4
AYW
xxxxx G
G
1 23
GATE
SOURCE
DRAIN
A
Y
W
xxxxx
G
= Assembly Location
= Year
= Work Week
= V8440 or 8440A
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
May, 2016 − Rev. 7
Publication Order Number:
NCV8440/D