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NCV8440 Datasheet, PDF (1/8 Pages) ON Semiconductor – Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection | |||
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NCV8440
Protected Power MOSFET
2.6 A, 52 V, NâChannel, Logic Level,
Clamped MOSFET w/ ESD Protection
Benefits
⢠High Energy Capability for Inductive Loads
⢠Low Switching Noise Generation
Features
⢠Diode Clamp Between Gate and Source
⢠ESD Protection â HBM 5000 V
⢠Active OverâVoltage Gate to Drain Clamp
⢠Scalable to Lower or Higher RDS(on)
⢠Internal Series Gate Resistance
⢠These are PbâFree Devices
Applications
⢠Automotive and Industrial Markets:
Solenoid Drivers, Lamp Drivers, Small Motor Drivers
⢠NCV Prefix for Automotive and Other Applications Requiring Site
and Control Changes
http://onsemi.com
VDSS
(Clamped)
52 V
RDS(ON) TYP
95 mW @ 10 V
ID MAX
2.6 A
Drain (Pins 2, 4)
Gate
(Pin 1)
Overvoltage
Protection
ESD Protection
Source (Pin 3)
MARKING
DIAGRAM
DRAIN
SOTâ223
CASE 318E
STYLE 3
1 = Gate
2 = Drain
3 = Source
4
AYW
F9N05 G
G
1 23
GATE
SOURCE
DRAIN
A
= Assembly Location
Y
= Year
W
= Work Week
G
= PbâFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shippingâ
NCV8440STT1G SOTâ223 1000/Tape & Reel
(PbâFree)
NCV8440STT3G SOTâ223 4000/Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
December, 2009 â Rev. 5
Publication Order Number:
NCV8440/D
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