NCR169D_05 Datasheet, PDF (1/8 Pages) ON Semiconductor – General Purpose Sensitive Gate Silicon Controlled Rectifier

NCR169D
General Purpose
Sensitive Gate
Silicon Controlled Rectifier
Reverse Blocking Thyristor
PNPN device designed for line-powered general purpose
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in a cost effective plastic TO-226AA package.
Features
• Sensitive Gate Allows Direct Triggering by Microcontrollers and
Other Logic Circuits
• On−State Current Rating of 0.8 Amperes RMS at 80°C
• Surge Current Capability − 10 Amperes
• Immunity to dV/dt − 20 V/μsec Minimum at 110°C
• Glass-Passivated Surface for Reliability and Uniformity
• Device Marking: NCR169D, Date Code
• Pb−Free Packages are Available
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1.)
(T_J = *40 to 110°C, Sine Wave, 50 to
60 Hz; Gate Open)
V_DRM,
V_RRM
400 Volts
On-State RMS Current
(T_C = 80°C) 180° Conduction Angles
I_T(RMS)
0.8
Amp
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
T_J = 25°C)
Circuit Fusing Consideration (t = 10 ms)
I_TSM
10
Amps
I²t
0.415 A²s
Forward Peak Gate Power
(T_A = 25°C, Pulse Width v 1.0 μs)
P_GM
0.1
Watt
Forward Average Gate Power
(T_A = 25°C, t = 20 ms)
Forward Peak Gate Current
(T_A = 25°C, Pulse Width v 1.0 μs)
P_G(AV)
I_GM
0.10 Watt
1.0
Amp
Reverse Peak Gate Voltage
(T_A = 25°C, Pulse Width v 1.0 μs)
V_GRM
5.0
Volts
Operating Junction Temperature Range
@ Rate V_RRM and V_DRM
Storage Temperature Range
T_J
−40 to °C
110
T_stg
−40 to °C
150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V_DRM and V_RRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
© Semiconductor Components Industries, LLC, 2005
1
October, 2005 − Rev. 1
http://onsemi.com
SCR
0.8 AMPERES RMS
400 VOLTS
G
A
K
K
GA
TO−92
(TO−226AA)
CASE 029
STYLE 10
MARKING
DIAGRAM
NCR
169D
ALYWWG
G
123
A = Assembly Location
L = Wafer Lot
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
1
Cathode
2
Gate
3
Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
NCR169D/D