NCP5111_16 Datasheet, PDF (1/14 Pages) ON Semiconductor – High Voltage, High and Low Side Driver

NCP5111
High Voltage, High and Low
Side Driver
The NCP5111 is a high voltage power gate driver providing two
outputs for direct drive of 2 N−channel power MOSFETs or IGBTs
arranged in a half−bridge configuration.
It uses the bootstrap technique to ensure a proper drive of the
high−side power switch.
Features
• High Voltage Range: up to 600 V
• dV/dt Immunity ±50 V/nsec
• Gate Drive Supply Range from 10 V to 20 V
• High and Low Drive Outputs
• Output Source / Sink Current Capability 250 mA / 500 mA
• 3.3 V and 5 V Input Logic Compatible
• Up to V_CC Swing on Input Pins
• Extended Allowable Negative Bridge Pin Voltage Swing to −10 V
for Signal Propagation
• Matched Propagation Delays between Both Channels
• One Input with Internal Fixed Dead Time (650 ns)
• Under V_CC LockOut (UVLO) for Both Channels
• Pin−to−Pin Compatible with Industry Standards
• These are Pb−Free Devices
Typical Applications
• Half−bridge Power Converters
www.onsemi.com
1
SOIC−8
D SUFFIX
CASE 751
MARKING
DIAGRAMS
8
P5111
ALYW
G
1
PDIP−8
P SUFFIX
CASE 626
NCP5111
AWL
YYWWG
NCP5111
A
L or WL
Y or YY
W or WW
G or G
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
PINOUT INFORMATION
VCC
IN
GND
DRV_LO
18
27
36
45
VBOOT
DRV_HI
BRIDGE
NC
ORDERING INFORMATION
Device
Package
Shipping^†
NCP5111PG
PDIP−8 50 Units / Rail
(Pb−Free)
NCP5111DR2G
SOIC−8 2500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
February, 2016 − Rev. 6
Publication Order Number:
NCP5111/D