NB4N855SMEVB Datasheet, PDF (1/6 Pages) ON Semiconductor – Evaluation Board Users Manual for NB4N855S

NB4N855SMEVB
Evaluation Board User's
Manual for NB4N855S
Description
ON Semiconductor has developed an evaluation board for
the NB4N855S device as a convenience for the customers
interested in performing their own device engineering
assessment. This board provides a high bandwidth 50 W
controlled impedance environment. The pictures in Figure 1
show the top and bottom view of the evaluation board, which
can be configured in several different ways.
This NB4N855S evaluation board manual contains:
• Appropriate Lab Setup
• Assembly Instructions
• Bill of Materials
This manual should be used in conjunction with the
NB4N855S device data sheet, which contains full technical
details on the device specifications and operation.
http://onsemi.com
EVAL BOARD USER’S MANUAL
Board Lay−Up
The NB4N855S evaluation board is implemented in four
layers with split (dual) power supplies (Figure 6, Evaluation
Board Lay−up). For standard lab setup, a split (dual) power
supply is essential to enable the 50 W internal impedance in
the oscilloscope as a devices termination. The first layer or
primary trace layer is 0.005″ thick Rogers RO4003 material,
which is designed to have equal electrical length on all signal
traces from the device under the test (DUT) to the sense
output. The second layer is the 1.0 oz copper ground plane.
The FR4 dielectric material is placed between second and
third layer and between third and fourth layer. The third
layer is also 1.0 oz copper ground plane. The fourth layer is
the secondary trace layer.
Top View
Bottom View
Figure 1. Top and Bottom View of the NB4N855S Evaluation Board
© Semiconductor Components Industries, LLC, 2012
1
February, 2012 − Rev. 2
Publication Order Number:
EVBUM2079/D