N02L63W3A Datasheet, PDF (1/11 Pages) ON Semiconductor – 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16bit

N02L63W3A
2Mb Ultra-Low Power Asynchronous CMOS SRAM
128K × 16bit
Overview
Features
The N02L63W3A is an integrated memory device
containing a 2 Mbit Static Random Access Memory
organized as 131,072 words by 16 bits. The device
is designed and fabricated using ON
Semiconductor’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with a single chip
enable (CE) control and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently. The N02L63W3A is
optimal for various applications where low-power is
critical such as battery backup and hand-held
devices. The device can operate over a very wide
temperature range of -40^oC to +85^oC and is
available in JEDEC standard packages compatible
with other standard 128Kb x 16 SRAMs.
Product Family
• Single Wide Power Supply Range
2.3 to 3.6 Volts
• Very low standby current
2.0µA at 3.0V (Typical)
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Very low Page Mode operating current
0.8mA at 3.0V and 1µs (Typical)
• Simple memory control
Single Chip Enable (CE)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.8V
• Very fast output enable access time
30ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package avail-
able
Part Number
N02L63W3AB
N02L63W3AT
N02L63W3AB2
N02L63W3AT2
Package Type
Operating
Temperature
Power
Supply
(Vcc)
Speed
Standby
Operating
Current (I_SB), Current (Icc),
Typical
Typical
48 - BGA
44 - TSOP II
48 - BGA Green
-40^oC to +85^oC
2.3V - 3.6V
55ns @ 2.7V
70ns @ 2.3V
2 µA
2 mA @ 1MHz
44 - TSOP II Green
©2008 SCILLC. All rights reserved.
July 2008 - Rev. 15
Publication Order Number:
N02L63W3A/D