N02L6181A Datasheet, PDF (1/11 Pages) ON Semiconductor – 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit

N02L6181A
2Mb Ultra-Low Power Asynchronous CMOS SRAM
128Kx16 bit
Features
Overview
The N02L6181A is an integrated memory device
containing a 2 Mbit Static Random Access Memory
organized as 131,072 words by 16 bits. The device
is designed and fabricated using ON
Semiconductor’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The base design is the same as ON
Semiconductor’s N02L63W3A, which is processed
to operate at higher voltages. The device operates
with a single chip enable (CE) control and output
enable (OE) to allow for easy memory expansion.
Byte controls (UB and LB) allow the upper and
lower bytes to be accessed independently. The
N02L6181A is optimal for various applications
where low-power is critical such as battery backup
and hand-held devices. The device can operate
over a very wide temperature range of -40^oC to
+85^oC and is available in JEDEC standard
packages compatible with other standard 128Kb x
16 SRAMs.
Product Family
• Single Wide Power Supply Range
1.65 to 2.2 Volts
• Very low standby current
0.5µA at 1.8V (Typical)
• Very low operating current
1.4mA at 1.8V and 1µs (Typical)
• Very low Page Mode operating current
0.5mA at 1.8V and 1µs (Typical)
• Simple memory control
Single Chip Enable (CE)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.2V
• Very fast output enable access time
30ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package
Part Number
N02L6181AB
N02L6181AB2
Package Type
Operating
Temperature
Power
Supply
(Vcc)
Speed
Standby
Operating
Current (I_SB), Current (Icc),
Max
Max
48 - BGA
Green 48-BGA
-40^oC to +85^oC ^{1.65V - 2.2V}
70 and 85ns
@ 1.65V
10 µA 3 mA @ 1MHz
©2008 SCILLC. All rights reserved.
July 2008 - Rev. 4
Publication Order Number:
N02L6181A/D