MUN5336DW1 Datasheet, PDF (1/6 Pages) ON Semiconductor – Complementary Bias Resistor Transistors

MUN5336DW1
Complementary Bias
Resistor Transistors
R1 = 100 kW, R2 = 100 kW
NPN and PNP Transistors with Monolithic
Bias Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T_A = 25°C both polarities Q₁ (PNP) & Q₂ (NPN), unless otherwise noted)
Rating
Symbol
Max
Unit
Collector-Base Voltage
V_CBO
50
Vdc
Collector-Emitter Voltage
V_CEO
50
Vdc
Collector Current − Continuous
I_C
100
mAdc
Input Forward Voltage
V_IN(fwd)
40
Vdc
Input Reverse Voltage
V_IN(rev)
10
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
Package
Shipping^†
MUN5336DW1T1G
SOT−363 3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
PIN CONNECTIONS
(3)
(2)
(1)
R₁
Q₁
R₂
R₁
(4)
(5)
R₂
Q₂
(6)
SOT−363
CASE 419B
MARKING
DIAGRAM
6
36 M G
G
1
36
= Specific Device Code
M
= Date Code*
G
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
© Semiconductor Components Industries, LLC, 2014
1
January, 2014 − Rev. 0
Publication Order Number:
DTC115EP/D