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MTY25N60E Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM | |||
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MTY25N60E
Preferred Device
Power MOSFET
25 Amps, 600 Volts
NâChannel TOâ264
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltageâblocking capability without degrading
performance over time. In addition, this advanced Power MOSFET is
designed to withstand high energy in the avalanche and commutation
modes. Designed for high voltage, high speed switching applications
in power supplies, converters and PWM motor controls, these devices
are particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
⢠Robust High Voltage Termination
⢠Avalanche Energy Specified
⢠Diode is Characterized for Use in Bridge Circuits
⢠IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
DrainâSource Voltage
DrainâGate Voltage (RGS = 1 Mâ¦)
GateâSource Voltage
â Continuous
â NonâRepetitive (tp ⤠10 ms)
Drain Current â Continuous @ TC = 25°C
Drain Current â Single Pulse (tp ⤠10 µs)
Total Power Dissipation
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
600
600
± 20
± 40
25
65
300
2.38
Operating and Storage Temperature Range TJ, Tstg â55 to
150
Single Pulse DrainâtoâSource Avalanche
Energy â Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak
IL = 25 Apk, L = 10 mH, RG = 25 â¦)
Thermal Resistance â Junction to Case
Thermal Resistance â Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8â³ from case for 10 seconds
EAS
RθJC
RθJA
TL
3000
0.42
40
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
25 AMPERES
600 VOLTS
RDS(on) = 210 mâ¦
NâChannel
D
G
S
1
23
TOâ264
CASE 340G
Style 1
MARKING DIAGRAM
& PIN ASSIGNMENT
MTY25N60E
LLYWW
1
Gate
3
Source
2
Drain
LL
= Location Code
Y
= Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTY25N60E
TOâ264
25 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
September, 2004 â Rev. XXX
Publication Order Number:
MTY25N60E/D
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