MTY20N50E Datasheet, PDF (1/7 Pages) ON Semiconductor – N−Channel Power MOSFET

MTY20N50E
Preferred Device
Power MOSFET
20 Amps, 500 Volts
N−Channel TO−264
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition, this advanced Power MOSFET is
designed to withstand high energy in the avalanche and commutation
modes. Designed for high voltage, high speed switching applications
in power supplies, converters and PWM motor controls, these devices
are particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
Drain−to−Gate Voltage (R_GS = 1.0 MΩ)
Gate−Source Voltage
− Continuous
− Non−Repetitive (t_p ≤ 10 ms)
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (t_p ≤ 10 μs)
Total Power Dissipation
Derate above 25°C
V_DSS
V_DGR
V_GS
V_GSM
I_D
I_D
I_DM
P_D
500
500
± 20
± 40
20
13.9
60
250
2.0
Operating and Storage Temperature Range
T_J, T_stg
−55 to
150
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 100 Vdc, V_GS = 10 Vdc,
I_L = 20 Apk, L = 10 mH, R_G = 25 Ω)
Thermal Resistance − Junction to Case
Thermal Resistance − Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
E_AS
R_θJC
R_θJA
T_L
2000
0.50
40
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
20 AMPERES
500 VOLTS
R_DS(on) = 260 mΩ
N−Channel
D
G
S
1
23
TO−264
CASE 340G
Style 1
MARKING DIAGRAM
& PIN ASSIGNMENT
MTY20N50E
LLYWW
1
Gate
3
Source
2
Drain
LL
= Location Code
Y
= Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTY20N50E
TO−264
25 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 2
Publication Order Number:
MTY20N50E/D