MTY14N100E Datasheet, PDF (1/7 Pages) Motorola, Inc – TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM

MTY14N100E
TMOS E−FET.™
Power Field Effect
Transistor
N−Channel Enhancement−Mode Silicon
Gate
This advanced TMOS power FET is designed to withstand high
energy in the avalanche and commutation modes. This new energy
efficient design also offers a drain−to−source diode with fast recovery
time. Designed for high voltage, high speed switching applications in
power supplies, converters, PWM motor controls, and other inductive
loads. The avalanche energy capability is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
http://onsemi.com
TMOS POWER FET
14 AMPERES, 1000 VOLTS
R_DS(on) = 0.80 W
TO−264
CASE 340G−02
STYLE 1
D
G
®
S
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (R_GS = 1.0 MΩ)
Gate−to−Source Voltage — Continuous
— Single Pulse (t_p ≤ 50 μs)
V_DSS
V_DGR
V_GS
V_GSM
1000
Vdc
1000
Vdc
± 20
Vdc
± 40
Vpk
Drain Current — Continuous
— Continuous @ T_C = 100°C
— Single Pulse (t_p ≤ 10 μs)
I_D
14
Adc
I_D
8.7
I_DM
49
Apk
Total Power Dissipation
Derate above 25°C
P_D
300
Watts
2.4
W/°C
Operating and Storage Temperature Range
T_J, T_stg
−55 to 150
°C
Single Pulse Drain−to−Source Avalanche Energy — Starting T_J = 25°C
(V_DD = 100 Vdc, V_GS = 10 Vdc, Peak I_L = 14 Apk, L = 10 mH, R_G = 25 Ω )
E_AS
980
mJ
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
R_θJC
R_θJA
0.42
°C/W
30
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
T_L
260
°C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 1
Publication Order Number:
MTY14N100E/D