MTY100N10E Datasheet, PDF (1/7 Pages) Motorola, Inc – TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM

MTY100N10E
Preferred Device
Power MOSFET
100 Amps, 100 Volts
N−Channel TO−264
This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. This new energy
efficient design also offers a drain−to−source diode with fast recovery
time. Designed for high voltage, high speed switching applications in
power supplies, converters, PWM motor controls, and other inductive
loads. The avalanche energy capability is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−Source Voltage
Drain−Gate Voltage (R_GS = 1 MΩ)
Gate−Source Voltage
− Continuous
− Non−Repetitive (t_p ≤ 10 ms)
Drain Current − Continuous @ T_C = 25°C
Drain Current − Single Pulse (t_p ≤ 10 μs)
Total Power Dissipation
Derate above 25°C
V_DSS
V_DGR
V_GS
V_GSM
I_D
I_DM
P_D
100 Vdc
100 Vdc
± 20 Vdc
± 40 Vpk
100 Adc
300 Apk
300 Watts
2.38 W/°C
Operating and Storage Temperature Range
T_J, T_stg − 55 to °C
150
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 80 Vdc, V_GS = 10 Vdc, Peak
I_L = 100 Apk, L = 0.1 mH, R_G = 25 Ω )
Thermal Resistance − Junction to Case
Thermal Resistance − Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
E_AS
250 mJ
R_θJC
R_θJA
T_L
0.42 °C/W
40
260 °C
http://onsemi.com
100 AMPERES
100 VOLTS
R_DS(on) = 11 mΩ
N−Channel
D
G
S
1
23
TO−264
CASE 340G
Style 1
MARKING DIAGRAM
& PIN ASSIGNMENT
MTY100N10E
LLYWW
1
Gate
3
Source
2
Drain
LL
= Location Code
Y
= Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTY100N10E
TO−264
25 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 4
Publication Order Number:
MTY100N10E/D