MTW6N100E Datasheet, PDF (1/7 Pages) Motorola, Inc – TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM

MTW6N100E
Preferred Device
Power MOSFET
6 Amps, 1000 Volts
N−Channel TO−247
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition, this advanced Power MOSFET is
designed to withstand high energy in the avalanche and commutation
modes. The new energy efficient design also offers a drain−to−source
diode with a fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Isolated Mounting Hole Reduces Mounting Hardware
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−Source Voltage
Drain−Gate Voltage (R_GS = 1.0 MΩ)
Gate−Source Voltage
− Continuous
− Non−Repetitive (t_p ≤ 10 ms)
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (t_p ≤ 10 μs)
Total Power Dissipation
Derate above 25°C
V_DSS
V_DGR
V_GS
V_GSM
I_D
I_D
I_DM
P_D
1000
1000
± 20
± 40
6.0
4.2
18
180
1.43
Operating and Storage Temperature Range
T_J, T_stg
−55 to
150
Single Pulse Drain−to−Source Avalanche
E_AS
720
Energy − Starting T_J = 25°C
(V_DD = 50 Vdc, V_GS = 10 Vdc,
I_L = 6.0 Apk, L = 27.77 mH, R_G = 25 Ω)
Thermal Resistance − Junction to Case
Thermal Resistance − Junction to Ambient
R_θJC
R_θJA
0.70
40
Maximum Lead Temperature for Soldering
T_L
260
Purposes, 1/8″ from case for 10 seconds
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
6 AMPERES
1000 VOLTS
R_DS(on) = 1.5 Ω
N−Channel
D
G
1
23
S
4
TO−247AE
CASE 340K
Style 1
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
MTW6N100E
LLYWW
1
Gate
3
Source
2
Drain
LL
= Location Code
Y
= Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTW6N100E
TO−247
30 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 5
Publication Order Number:
MTW6N100E/D