MTW35N15E Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM

MTW35N15E
Preferred Device
Power MOSFET
35 Amps, 150 Volts
N−Channel TO−247
This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain−to−source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Isolated Mounting Hole Reduces Mounting Hardware
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−Source Voltage
V_DSS
150
Drain−Gate Voltage (R_GS = 1.0 MΩ)
V_DGR
150
Gate−Source Voltage
− Continuous
− Non−Repetitive (t_p ≤ 10 ms)
V_GS
V_GSM
± 20
± 40
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (t_p ≤ 10 µs)
I_D
35
I_D
26.9
I_DM
105
Total Power Dissipation
Derate above 25°C
P_D
180
1.45
Operating and Storage Temperature Range T_J, T_stg −55 to
150
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 80 Vdc, V_GS = 10 Vdc,
I_L = 20 Apk, L = 3.0 mH, R_G = 25 Ω)
E_AS
600
Thermal Resistance − Junction to Case
Thermal Resistance − Junction to Ambient
R_θJC
R_θJA
0.70
62.5
Maximum Lead Temperature for Soldering
T_L
260
Purposes, 1/8″ from case for 10 seconds
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
35 AMPERES
150 VOLTS
R_DS(on) = 50 mΩ
N−Channel
D
G
1
23
S
4
TO−247AE
CASE 340K
Style 1
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
MTW35N15E
LLYWW
1
Gate
3
Source
2
Drain
LL
= Location Code
Y
= Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTW35N15E
TO−247
30 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
1
February, 2005 − Rev. XXX
Publication Order Number:
MTW35N15E/D