MTW32N20E Datasheet, PDF (1/7 Pages) Motorola, Inc – TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM

MTW32N20E
Preferred Device
Power MOSFET
32 Amps, 200 Volts
N−Channel TO−247
This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain−to−source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
Features
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Isolated Mounting Hole
• Pb−Free Package is Available*
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−Source Voltage
Drain−Gate Voltage (R_GS = 1.0 MW)
Gate−Source Voltage − Continuous
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (t_p ≤ 10 ms)
Total Power Dissipation
Derate above 25°C
V_DSS
V_DGR
V_GS
I_D
I_D
I_DM
P_D
200
200
± 20
32
19
128
180
1.44
Vdc
Vdc
Vdc
Adc
Apk
W
W/°C
Operating and Storage Temperature Range T_J, T_stg −55 to 150 °C
Single Pulse Drain−to−Source Avalanche
E_AS
Energy − Starting T_J = 25°C
(V_DD = 50 Vdc, V_GS = 10 Vpk,
I_L = 32 Apk, L = 1.58 mH, R_G = 25 W )
810
mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
R_qJC
R_qJA
0.7
°C/W
40
Maximum Lead Temperature for Soldering
T_L
Purposes, 1/8″ from case for 10 seconds
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
June, 2006 − Rev. 6
http://onsemi.com
32 AMPERES, 200 VOLTS
R_DS(on) = 75 mW
N−Channel
D
G
S
MARKING DIAGRAM
AND PIN ASSIGNMENT
4 Drain
1
TO−247AE
CASE 340K
STYLE 1
MTW32N20E
AYWWG
1
Gate
2
Drain
3
Source
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MTW32N20E
MTW32N20EG
TO−247
TO−247
(Pb−Free)
30 Units/Rail
30 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MTW32N20E/D