MTW20N50E Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.24 OHM

MTW20N50E
Preferred Device
Power MOSFET
20 Amps, 500 Volts
N−Channel TO−247
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition, this advanced Power MOSFET is
designed to withstand high energy in the avalanche and commutation
modes. The new energy efficient design also offers a drain−to−source
diode with a fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Isolated Mounting Hole Reduces Mounting Hardware
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−Source Voltage
V_DSS
500
Drain−Gate Voltage (R_GS = 1.0 MΩ)
V_DGR
500
Gate−Source Voltage
− Continuous
− Non−Repetitive (t_p ≤ 10 ms)
V_GS
V_GSM
± 20
± 40
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (t_p ≤ 10 µs)
I_D
20
I_D
14.1
I_DM
60
Total Power Dissipation
Derate above 25°C
P_D
250
2.0
Operating and Storage Temperature Range T_J, T_stg −55 to
150
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 100 Vdc, V_GS = 10 Vdc,
I_L = 20 Apk, L = 10 mH, R_G = 25 Ω)
Thermal Resistance − Junction to Case
Thermal Resistance − Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
E_AS
R_θJC
R_θJA
T_L
2000
0.50
40
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
20 AMPERES
500 VOLTS
R_DS(on) = 240 mΩ
N−Channel
D
G
1
23
S
4
TO−247AE
CASE 340K
Style 1
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
MTW20N50E
LLYWW
1
Gate
3
Source
2
Drain
LL
= Location Code
Y
= Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTW20N50E
TO−247
30 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
1
August, 2004 − Rev. XXX
Publication Order Number:
MTW20N50E/D