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MTW10N100E Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM | |||
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MTW10N100E
Preferred Device
Power MOSFET
10 Amps, 1000 Volts
NâChannel TOâ247
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltageâblocking capability without degrading
performance over time. In addition, this advanced Power MOSFET is
designed to withstand high energy in the avalanche and commutation
modes. The new energy efficient design also offers a drainâtoâsource
diode with a fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transient.
⢠Robust High Voltage Termination
⢠Avalanche Energy Specified
⢠SourceâtoâDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
⢠Diode is Characterized for Use in Bridge Circuits
⢠IDSS and VDS(on) Specified at Elevated Temperature
⢠Isolated Mounting Hole Reduces Mounting Hardware
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
DrainâSource Voltage
DrainâGate Voltage (RGS = 1.0 Mâ¦)
GateâSource Voltage
â Continuous
â NonâRepetitive (tp ⤠10 ms)
Drain Current â Continuous
Drain Current â Continuous @ 100°C
Drain Current â Single Pulse (tp ⤠10 µs)
Total Power Dissipation
Derate above 25°C
VDSS
VDGR
1000 Vdc
1000 Vdc
VGS
VGSM
ID
ID
IDM
PD
± 20 Vdc
± 40 Vpk
10 Adc
6.2
30 Apk
250 Watts
2.0 W/°C
Operating and Storage Temperature Range
TJ, Tstg â 55 to °C
150
Single Pulse DrainâtoâSource Avalanche
Energy â Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc,
IL = 10 Apk, L = 10 mH, RG = 25 â¦)
Thermal Resistance â Junction to Case
Thermal Resistance â Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8â³ from case for 10 seconds
EAS
500 mJ
RθJC
RθJA
TL
0.50 °C/W
40
260 °C
http://onsemi.com
10 AMPERES
1000 VOLTS
RDS(on) = 1.3 â¦
NâChannel
D
G
1
23
S
4
TOâ247AE
CASE 340K
Style 1
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
MTW10N100E
LLYWW
1
Gate
3
Source
2
Drain
LL
= Location Code
Y
= Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTW10N100E
TOâ247
30 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
September, 2004 â Rev. XXX
Publication Order Number:
MTW10N100E/D
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