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MTV32N25E Datasheet, PDF (1/11 Pages) ON Semiconductor – Power Field Effect Transistor | |||
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MTV32N25E
Designerâs⢠Data Sheet
TMOS EâFET.â¢
Power Field Effect
Transistor
D3PAK for Surface Mount
NâChannel EnhancementâMode Silicon
Gate
The D3PAK package has the capability of housing the largest chip
size of any standard, plastic, surface mount power semiconductor. This
allows it to be used in applications that require surface mount
components with higher power and lower RDS(on) capabilities. This
high voltage MOSFET uses an advanced termination scheme to provide
enhanced voltageâblocking capability without degrading performance
over time. In addition, this advanced TMOS EâFET is designed to
withstand high energy in the avalanche and commutation modes. The
new energy efficient design also offers a drainâtoâsource diode with a
fast recovery time. Designed for low voltage, high speed switching
applications in surface mount PWM motor controls and both acâdc and
dcâdc power supplies. These devices are particularly well suited for
bridge circuits where diode speed and commutating safe operating areas
are critical and offer additional safety margin against unexpected
voltage transients.
⢠Robust High Voltage Termination
⢠Avalanche Energy Specified
⢠SourceâtoâDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
⢠Diode is Characterized for Use in Bridge Circuits
⢠IDSS and VDS(on) Specified at Elevated Temperature
⢠Short Heatsink Tab Manufactured â Not Sheared
⢠Specifically Designed Leadframe for Maximum Power Dissipation
⢠Available in 24 mm, 13âinch/500 Unit Tape & Reel, Add âRL Suffix
to Part Number
http://onsemi.com
TMOS POWER FET
32 AMPERES, 250 VOLTS
RDS(on) = 0.08 W
D3PAK Surface Mount
CASE 433â01
Style 2
D
NâChannel
®
G
S
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 â Rev. 1
Publication Order Number:
MTV32N25E/D
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