MTP9N25E Datasheet, PDF (1/7 Pages) Motorola, Inc – TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM

MTP9N25E
Designer’s™ Data Sheet
TMOS E−FET.™
Power Field Effect
Transistor
N−Channel Enhancement−Mode Silicon
Gate
This advanced TMOS E−FET is designed to withstand high energy
in the avalanche and commutation modes. The new energy efficient
design also offers a drain−to−source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power
supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
http://onsemi.com
TMOS POWER FET
9.0 AMPERES, 250 VOLTS
R_DS(on) = 0.45 W
TO−220AB
CASE 221A−06
Style 5
D
®
G
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol
S
Value
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (R_GS = 1.0 MΩ)
Gate−to−Source Voltage — Continuous
— Non−Repetitive (t_p ≤ 10 ms)
V_DSS
V_DGR
V_GS
V_GSM
250
Vdc
250
Vdc
± 20
Vdc
± 40
Vpk
Drain Current — Continuous
— Continuous @ 100°C
— Single Pulse (t_p ≤ 10 μs)
I_D
9.0
Adc
I_D
5.7
I_DM
32
Apk
Total Power Dissipation
Derate above 25°C
P_D
80
Watts
0.64
W/°C
Operating and Storage Temperature Range
T_J, T_stg
−55 to 150
°C
Single Pulse Drain−to−Source Avalanche Energy — Starting T_J = 25°C
(V_DD = 80 Vdc, V_GS = 10 Vdc, Peak I_L = 9.0 Apk, L = 3.0 mH, R_G = 25 Ω)
E_AS
mJ
122
Thermal Resistance — Junction to Case
— Junction to Ambient
R_θJC
R_θJA
1.56
°C/W
62.5
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
T_L
260
°C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 1
Publication Order Number:
MTP9N25E/D