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MTP7N20E Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 7.0 AMPERES 200 VOLTS RDS(on) = 0.70 OHMS
MTP7N20E
Preferred Device
Power MOSFET
7 Amps, 200 Volts
N−Channel TO−220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tp ≤ 10 ms)
Drain Current
− Continuous
− Continuous @ 100°C
− Single Pulse (tp ≤ 10 µs)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VDSS
200
VDGR
200
VGS
± 20
VGSM
± 40
ID
7.0
ID
3.8
IDM
21
PD
50
0.4
Operating and Storage Temperature
Range
TJ, Tstg
−55 to
150
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 80 Vdc, VGS = 10 Vdc, Peak
IL = 7.0 Adc, L = 10 mH, RG = 25 Ω)
Thermal Resistance
− Junction to Case°
− Junction to Ambient°
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10
seconds
EAS
RθJC
RθJA
TL
74
2.5°
62.5°
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
7 AMPERES
200 VOLTS
RDS(on) = 700 mΩ
N−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
4
Drain
1
2
3
TO−220AB
CASE 221A
STYLE 5
MTP7N20E
LLYWW
1
Gate
3
Source
2
Drain
MTP7N20E = Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTP7N20E
TO−220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
1
February, 2005 − Rev.XXX
Publication Order Number:
MTP7N20E/D