MTP75N06HD Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 75 AMPERES RDS(on) = 10.0 mOHM 60 VOLTS

MTP75N06HD
Preferred Device
Power MOSFET
75 A, 60 V, N−Channel, TO−220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low−voltage, high−speed switching applications in power supplies,
converters and PWM motor controls, and inductive loads. The
avalanche energy capability is specified to eliminate the guesswork in
designs where inductive loads are switched, and to offer additional
safety margin against unexpected voltage transients.
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Avalanche Energy Specified
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−Source Voltage
Drain−Gate Voltage (R_GS = 1.0 MW)
Gate−Source Voltage − Continuous
Gate−Source Voltage − Single Pulse
V_DSS
60
Vdc
V_DGR
60
Vdc
V_GS
± 20
Vdc
± 30
Vpk
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (t_p ≤ 10 ms)
Total Power Dissipation
Derate above 25°C
I_D
75
Adc
I_D
50
I_DM
225
Apk
P_D
150
W
1.0
W/°C
Operating and Storage Temperature
Range
T_J, T_stg − 55 to
°C
175
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 25 Vdc, V_GS = 10 Vdc,
I_L = 75 Apk, L = 0.177 mH, R_G = 25 W)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
E_AS
R_qJC
R_qJA
500
mJ
°C/W
1.0
62.5
Maximum Lead Temperature for Soldering
T_L
Purposes, 1/8″ from case for 10
seconds
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
75 AMPERES
60 VOLTS
R_DS(on) = 10 mW
N−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
TO−220AB
CASE 221A
STYLE 5
M75N06HD
LLYWW
1
2
3
M75N06HD
LL
Y
WW
1
Gate
3
Source
2
Drain
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTP75N06HD TO−220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 4
Publication Order Number:
MTP75N06HD/D