MTP75N05HD Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 75 AMPERES RDS(on) = 9.5 mW 50 VOLTS

MTP75N05HD
Preferred Device
Power MOSFET
75 Amps, 50 Volts
N–Channel TO–220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy–efficient design also
offers a drain–to–source diode with a fast recovery time. Designed for
low–voltage, high–speed switching applications in power supplies,
converters and PWM motor controls, and other inductive loads. The
avalanche energy capability is specified to eliminate the guesswork in
designs where inductive loads are switched, and to offer additional
safety margin against unexpected voltage transients.
• SPICE Parameters Available
• Diode is Characterized for Use in Bridge Circuits
• Diode Exhibits High Speed, Yet Soft Recovery
• IDSS and VDS(on) Specified at Elevated Temperature
• Avalanche Energy Specified
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain–Source Voltage
VDSS
50
Drain–Gate Voltage (RGS = 1.0 MΩ)
VDGR
50
Gate–Source Voltage – Continuous
VGS
±20
Drain Current – Continuous
ID
75
Drain Current – Continuous @ 100°C
ID
65
Drain Current – Single Pulse (tp ≤ 10 µs)
IDM
225
Total Power Dissipation
Derate above 25°C
PD
150
1
Operating and Storage Temperature
Range
TJ, Tstg –55 to
175
Single Pulse Drain–to–Source Avalanche
EAS
500
Energy – Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vpk,
IL = 75 Apk, L = 0.177 mH, RG = 25 Ω)
Thermal Resistance
– Junction to Case
– Junction to Ambient
R_θJC
1.00
R_θJA
62.5
Maximum Lead Temperature for Soldering
TL
260
Purposes, 1/8″ from case for 10
seconds
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
75 AMPERES
50 VOLTS
RDS(on) = 9.5 mΩ
N–Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
4
Drain
1
2
3
TO–220AB
CASE 221A
STYLE 5
MTP75N05HD
LLYWW
1
Gate
3
Source
2
Drain
MTP75N05HD
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTP75N05HD TO–220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
November, 2000 – Rev. 4
Publication Order Number:
MTP75N05HD/D