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MTP6P20E Datasheet, PDF (1/7 Pages) Motorola, Inc – TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 1.0 OHM | |||
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MTP6P20E
Preferred Device
Power MOSFET
6 Amps, 200 Volts
PâChannel TOâ220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drainâtoâsource diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
⢠Avalanche Energy Specified
⢠SourceâtoâDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
⢠Diode is Characterized for Use in Bridge Circuits
⢠IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
DrainâSource Voltage
DrainâGate Voltage (RGS = 1.0 MΩ)
VDSS
200
VDGR
200
GateâSource Voltage
â Continuous
â NonâRepetitive (tp ⤠10 ms)
VGS
VGSM
± 20
± 40
Drain Current â Continuous
ID
6.0
â Continuous @ 100°C
ID
3.9
â Single Pulse (tp ⤠10 μs)
IDM
21
Total Power Dissipation
Derate above 25°C
PD
75
0.6
Operating and Storage Temperature
Range
TJ, Tstg
â55 to
150
Single Pulse DrainâtoâSource Avalanche
EAS
180
Energy â Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL = 6.0 Apk, L = 10 mH, RG = 25 Ω)
Thermal Resistance
â Junction to Case
â Junction to Ambient
RθJC
RθJA
1.67
62.5
Maximum Lead Temperature for Soldering
TL
260
Purposes, 1/8â³ from case for 10
seconds
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
6 AMPERES
200 VOLTS
RDS(on) = 1 Ω
PâChannel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
4
Drain
TOâ220AB
CASE 221A
STYLE 5
MTP6P20E
LLYWW
1
2
3
1
Gate
3
Source
2
Drain
MTP6P20E
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTP6P20E
TOâ220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 â Rev. 2
Publication Order Number:
MTP6P20E/D
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