MTP6N60E Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMS

MTP6N60E
Power Field Effect
Transistor
N−Channel Enhancement−Mode Silicon
Gate
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition, this advanced MOSFET is
designed to withstand high energy in the avalanche and commutation
modes. The new energy efficient design also offers a drain−to−source
diode with a fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
http://onsemi.com
TMOS POWER FET
6.0 AMPERES, 600 VOLTS
R_DS(on) = 1.2 W
TO−220AB
CASE 221A−09
Style 5
D
G
S
© Semiconductor Components Industries, LLC, 2013
1
May, 2013 − Rev. 7
Publication Order Number:
MTP6N60E/D