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MTP60N06HD Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM | |||
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MTP60N06HD
Preferred Device
Power MOSFET
60 Amps, 60 Volts
NâChannel TOâ220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drainâtoâsource diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
⢠Avalanche Energy Specified
⢠SourceâtoâDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
⢠Diode is Characterized for Use in Bridge Circuits
⢠IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
DrainâSource Voltage
DrainâGate Voltage (RGS = 1.0 MΩ)
GateâSource Voltage
â Continuous
â NonâRepetitive (tp ⤠10 ms)
Drain Current â Continuous
â Continuous @ 100°C
â Single Pulse (tp ⤠10 μs)
Total Power Dissipation
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
60
60
± 20
± 30
60
42.3
180
150
1.0
Operating and Storage Temperature
Range
TJ, Tstg
â55 to
175
Single Pulse DrainâtoâSource Avalanche
EAS
540
Energy â Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 60 Apk, L = 0.3 mH, RG = 25 Ω)
Thermal Resistance
â Junction to Case
â Junction to Ambient
RθJC
RθJA
1.0
62.5
Maximum Lead Temperature for Soldering
TL
260
Purposes, 1/8â³ from case for 10
seconds
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
60 AMPERES
60 VOLTS
RDS(on) = 14 mΩ
NâChannel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
4
Drain
1
2
3
TOâ220AB
CASE 221A
STYLE 5
MTP60N06HD
LLYWW
1
Gate
3
Source
2
Drain
MTP60N06HD
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTP60N06HD TOâ220AB 50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 â Rev. 4
Publication Order Number:
MTP60N06HD/D
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