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MTP3N60E Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS | |||
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MTP3N60E
Designerâs⢠Data Sheet
TMOS EâFET.â¢
High Energy Power FET
NâChannel EnhancementâMode Silicon
Gate
This advanced high voltage TMOS EâFET is designed to withstand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drainâtoâsource diode with fast
recovery time. Designed for high voltage, high speed switching
applications such as power supplies, PWM motor controls and other
inductive loads, the avalanche energy capability is specified to
eliminate the guesswork in designs where inductive loads are switched
and offer additional safety margin against unexpected voltage
transients.
⢠Avalanche Energy Capability Specified at Elevated
Temperature
⢠Low Stored Gate Charge for Efficient Switching
⢠Internal SourceâtoâDrain Diode Designed to Replace External Zener
Transient Suppressor â Absorbs High Energy in the Avalanche
Mode
⢠SourceâtoâDrain Diode Recovery Time Comparable to Discrete
Fast Recovery Diode
http://onsemi.com
TMOS POWER FET
3.0 AMPERES, 600 VOLTS
RDS(on) = 2.2 W
TO-220AB
CASE 221Aâ09
Style 5
D
®
G
S
Preferred devices are Motorola recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 â Rev. 3
Publication Order Number:
MTP3N60E/D
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