MTP33N10E Datasheet, PDF (1/7 Pages) Motorola, Inc – TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM

MTP33N10E
Preferred Device
Power MOSFET
33 Amps, 100 Volts
N−Channel TO−220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−Source Voltage
Drain−Gate Voltage (R_GS = 1.0 MΩ)
Gate−Source Voltage
− Continuous
− Non−Repetitive (t_p ≤ 10 ms)
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (t_p ≤ 10 μs)
Total Power Dissipation
Derate above 25°C
V_DSS
V_DGR
V_GS
V_GSM
I_D
I_D
I_DM
P_D
100 Vdc
100 Vdc
± 20 Vdc
± 40 Vpk
33
Adc
20
99
Apk
125 Watts
1.0 W/°C
Operating and Storage Temperature Range T_J, T_stg − 55 to °C
150
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 25 Vdc, V_GS = 10 Vdc,
I_L = 33 Apk, L = 1.000 mH, R_G = 25 Ω)
Thermal Resistance
− Junction to Case
− Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 sec.
E_AS
545
mJ
R_θJC
R_θJA
T_L
°C/W
1.0
62.5
260
°C
http://onsemi.com
33 AMPERES
100 VOLTS
R_DS(on) = 60 mΩ
N−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
4
Drain
1
2
3
TO−220AB
CASE 221A
STYLE 5
MTP33N10E
LLYWW
1
Gate
3
Source
2
Drain
MTP33N10E
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTP33N10E
TO−220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 5
Publication Order Number:
MTP33N10E/D