MTP2P50E_10 Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET 2 Amps, 500 Volts

MTP2P50E
Power MOSFET
2 Amps, 500 Volts
P−Channel TO−220
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition, this Power MOSFET is designed
to withstand high energy in the avalanche and commutation modes.
The energy efficient design also offers a drain−to−source diode with a
fast recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
Features
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• This is a Pb−Free Device*
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−Source Voltage
Drain−Gate Voltage (R_GS = 1.0 MW)
Gate−Source Voltage
− Continuous
− Non−Repetitive (t_p ≤ 10 ms)
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (t_p ≤ 10 ms)
Total Power Dissipation
Derate above 25°C
V_DSS
V_DGR
V_GS
V_GSM
I_D
I_D
I_DM
P_D
500
Vdc
500
Vdc
± 20
Vdc
± 40
Vpk
2.0
Adc
1.6
6.0
Apk
75
W
0.6
W/°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 100 Vdc, V_GS = 10 Vdc,
I_L = 4.0 Apk, L = 10 mH, R_G = 25 W)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 sec
T_J, T_stg −55 to 150 °C
E_AS
80
mJ
R_qJC
R_qJA
T_L
°C/W
1.67
62.5
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
1
May, 2010 − Rev. 6
http://onsemi.com
2 AMPERES, 500 VOLTS
R_DS(on) = 6 W
P−Channel
D
G
S
MARKING DIAGRAM
AND PIN ASSIGNMENT
4
4
Drain
1
2
3
TO−220AB
CASE 221A
STYLE 5
MTP
2P50EG
AYWW
1
Gate
2
Drain
3
Source
MTP2P50E = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MTP2P50EG
TO−220AB
(Pb−Free)
50 Units/Rail
Publication Order Number:
MTP2P50E/D