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MTP2N60E Datasheet, PDF (1/7 Pages) Motorola, Inc – TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS | |||
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MTP2N60E
Designerâs⢠Data Sheet
TMOS EâFET.â¢
Power Field Effect
Transistor
NâChannel EnhancementâMode Silicon
Gate
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltageâblocking capability without degrading
performance over time. In addition, this advanced TMOS EâFET is
designed to withstand high energy in the avalanche and commutation
modes. The new energy efficient design also offers a drainâtoâsource
diode with a fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
⢠Robust High Voltage Termination
⢠Avalanche Energy Specified
⢠SourceâtoâDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
⢠Diode is Characterized for Use in Bridge Circuits
⢠IDSS and VDS(on) Specified at Elevated Temperature
http://onsemi.com
TMOS POWER FET
2.0 AMPERES, 600 VOLTS
RDS(on) = 3.8 W
TOâ220AB
CASE 221Aâ06
Style 5
D
®
G
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
S
Unit
DrainâtoâSource Voltage
DrainâtoâGate Voltage (RGS = 1.0 MΩ)
GateâtoâSource Voltage â Continuous
â Single Pulse (tp ⤠50 μs)
VDSS
VDGR
VGS
600
Vdc
600
Vdc
± 20
Vdc
± 40
Drain Current â Continuous
â Single Pulse (tp ⤠10 μs)
ID
2.0
Adc
IDM
9.0
Total Power Dissipation
Derate above 25°C
PD
50
Watts
0.4
W/°C
Operating and Storage Temperature Range
TJ, Tstg
â55 to 150
°C
Single Pulse DrainâtoâSource Avalanche Energy â Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, L = 95 mH, RG = 25 Ω, Peak IL = 2.0 Adc)
EAS
190
mJ
Thermal Resistance â Junction to Case°
â Junction to Ambient°
RθJC
RθJA
2.5°
62.5°
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8â³ from case for 10 seconds
TL
260
°C
Designerâs Data for âWorst Caseâ Conditions â The Designerâs Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves â representing boundaries on device characteristics â are given to facilitate âworst caseâ design.
Preferred devices are Motorola recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 â Rev. 3
Publication Order Number:
MTP2N60E/D
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