MTP29N15E Datasheet, PDF (1/12 Pages) Motorola, Inc – TMOS POWER FET 29 AMPERES 150 VOLTS RDS(on) = 0.07 OHM

MTP29N15E
Preferred Device
Power MOSFET
29 Amps, 150 Volts
N–Channel TO–220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain–to–source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls. These devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain–to–Source Voltage
VDSS
150
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
VDGR
150
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tp ≤ 10 ms)
VGS
±ā20
VGSM
±ā40
Drain Current – Continuous
ID
29
Drain Current – Continuous @ 100°C
ID
19
Drain Current – Single Pulse (tp ≤ 10 µs)
IDM
102
Total Power Dissipation
Derate above 25°C
PD
125
1.0
Operating and Storage Temperature
Range
TJ, Tstg –55 to
150
Single Pulse Drain–to–Source Avalanche
EAS
421
Energy – Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 29 Apk, L = 1.0 mH, RG = 25 W)
Thermal Resistance
– Junction to Case
– Junction to Ambient
R_θJC
1.0
R_θJA
62.5
Maximum Lead Temperature for Soldering
TL
260
Purposes, 1/8″ from case for 10
seconds
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
29 AMPERES
150 VOLTS
RDS(on) = 70 mΩ
N–Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
4
Drain
1
2
3
TO–220AB
CASE 221A
STYLE 5
MTP29N15E
LLYWW
1
Gate
3
Source
2
Drain
MTP29N15E
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTP29N15E
TO–220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
November, 2000 – Rev. 2
Publication Order Number:
MTP29N15E/D