MTP23P06VG Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET 23 Amps, 60 Volts

MTP23P06V
Preferred Device
Power MOSFET
23 Amps, 60 Volts
P−Channel TO−220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Features
• Avalanche Energy Specified
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Pb−Free Package is Available*
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (R_GS = 1.0 MW)
Gate−to−Source Voltage
− Continuous
− Non−repetitive (t_p ≤ 10 ms)
Drain Current − Continuous @ 25°C
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (t_p ≤ 10 ms)
Total Power Dissipation @ 25°C
Derate above 25°C
V_DSS
V_DGR
V_GS
V_GSM
I_D
I_D
I_DM
P_D
60
Vdc
60
Vdc
± 15
Vdc
± 25
Vpk
23
Adc
15
81
Apk
90
W
0.60 W/°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 25 Vdc, V_GS = 10 Vdc, Peak
I_L = 23 Apk, L = 3.0 mH, R_G = 25 W)
Thermal Resistance − Junction−to−Case
Thermal Resistance − Junction−to−Ambient
T_J, T_stg − 55 to 175 °C
E_AS
794
mJ
R_qJC
R_qJA
1.67 °C/W
62.5
Maximum Lead Temperature for Soldering
T_L
Purposes, 1/8″ from Case for 10 seconds
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
June, 2006 − Rev. 4
http://onsemi.com
23 AMPERES, 60 VOLTS
R_DS(on) = 120 mW
P−Channel
D
G
S
MARKING DIAGRAM
AND PIN ASSIGNMENT
4
4
Drain
1
2
3
TO−220AB
CASE 221A
STYLE 5
MTP
23P06VG
AYWW
1
3
Gate ₂ Source
Drain
MTP23P06V = Device Code
A
= Location Code
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MTP23P06V
TO−220AB
50 Units/Rail
MTP23P06VG TO−220AB
(Pb−Free)
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MTP23P06V/D