MTP20N20E Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 20 AMPERES 200 VOLTS RDS(on) = 0.16 OHM

MTP20N20E
Preferred Device
Power MOSFET
20 Amps, 200 Volts
N−Channel TO−220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−Source Voltage
V_DSS
200
Drain−Gate Voltage (R_GS = 1.0 MΩ)
V_DGR
200
Gate−Source Voltage
− Continuous
− Non−Repetitive (t_p ≤ 10 ms)
V_GS
V_GSM
± 20
± 40
Drain − Continuous
− Continuous @ 100°C
− Single Pulse (t_p ≤ 10 µs)
I_D
20
I_D
12
I_DM
60
Total Power Dissipation
Derate above 25°C
P_D
125
1.0
Operating and Storage Temperature
Range
T_J, T_stg
−55 to
150
Single Pulse Drain−to−Source Avalanche
E_AS
600
Energy − Starting T_J = 25°C
(V_DD = 25 Vdc, V_GS = 10 Vdc,
I_L = 20 Apk, L = 3.0 mH, R_G = 25 Ω)
Thermal Resistance
− Junction to Case
− Junction to Ambient
R_θJC
R_θJA
1.00
62.5
Maximum Lead Temperature for Soldering
T_L
260
Purposes, 1/8″ from case for 10
seconds
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
20 AMPERES
200 VOLTS
R_DS(on) = 160 mΩ
N−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
4
Drain
1
2
3
TO−220AB
CASE 221A
STYLE 5
MTP20N20E
LLYWW
1
Gate
3
Source
2
Drain
MTP20N20E
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTP20N20E
TO−220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
1
February, 2005 − Rev. XXX
Publication Order Number:
MTP20N20E/D