MTP1N60E Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM

MTP1N60E
Preferred Device
Power MOSFET
1 Amp, 600 Volts
N−Channel TO−220
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition, the MOSFET is designed to
withstand high energy in the avalanche and commutation modes. The
new energy efficient design also offers a drain−to−source diode with a
fast recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−Source Voltage
Drain−Gate Voltage (R_GS = 1.0 MΩ)
Gate−Source Voltage
− Continuous
− Non−Repetitive (t_p ≤ 10 ms)
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (t_p ≤ 10 µs)
Total Power Dissipation
Derate above 25°C
V_DSS
600
V_DGR
600
V_GS
V_GSM
± 20
± 40
I_D
1.0
I_D
0.8
I_DM
3.0
P_D
50
0.4
Operating and Storage Temperature Range
T_J, T_stg − 55 to
150
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 100 Vdc, V_GS = 10 Vdc,
I_L = 3.0 Apk, L = 10 mH, R_G = 25 Ω)
E_AS
45
Thermal Resistance − Junction to Case
Thermal Resistance − Junction to Ambient
R_θJC
R_θJA
2.50
62.5
Maximum Lead Temperature for Soldering
T_L
260
Purposes, 1/8″ from case for 10 seconds
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
1 AMPERE
600 VOLTS
R_DS(on) = 8 Ω
N−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
4
Drain
1
2
3
TO−220AB
CASE 221A
STYLE 5
MTP1N60E
LLYWW
1
Gate
3
Source
2
Drain
MTP1N60E = Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTP1N60E
TO−220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
1
August, 2004 − Rev. XXX
Publication Order Number:
MTP1N60E/D