MTP1306 Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM

MTP1306
Preferred Device
Power MOSFET
75 Amps, 30 Volts
N−Channel TO−220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating area are critical and offer additional safety margin
against unexpected voltage transients.
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable
to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
Drain−to−Gate Voltage (R_GS = 1.0 MΩ)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (t_p ≤ 10 ms)
Drain Current
− Continuous
− Continuous @ 100°C
− Single Pulse (t_p ≤ 10 µs)
Total Power Dissipation
Derate above 25°C
V_DSS
V_DGR
V_GS
V_GSM
I_D
I_D
I_DM
P_D
30
30
± 20
± 20
75
59
225
150
1.2
Operating and Storage Temperature
Range
T_J, T_stg
−55 to
150
Single Pulse Drain−to−Source Avalanche
E_AS
Energy − Starting T_J = 25°C
280
(V_DD = 25 Vdc, V_GS = 10 Vdc, Peak
I_L = 75 Apk, L = 0.1 mH, R_G = 25 Ω)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
R_θJC
R_θJA
0.8
62.5
Maximum Lead Temperature for Soldering
T_L
260
Purposes, 1/8″ from Case for 5.0
seconds
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
75 AMPERES
30 VOLTS
R_DS(on) = 6.5 mΩ
N−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
4
Drain
1
2
3
TO−220AB
CASE 221A
STYLE 5
MTP1306
LLYWW
1
Gate
3
Source
2
Drain
MTP1306
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTP1306
TO−220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
September, 2004 − Rev. XXX
Publication Order Number:
MTP1306/D