MTD6P10E Datasheet, PDF (1/7 Pages) Motorola, Inc – TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM

MTD6P10E
Preferred Device
Power MOSFET
6 Amps, 100 Volts
P−Channel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Features
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Pb−Free Packages are Available
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (R_GS = 1.0 MW)
Gate−to−Source Voltage
− Continuous
− Non−repetitive (t_p ≤ 10 ms)
Drain Current
− Continuous
− Continuous @ 100°C
− Single Pulse (t_p ≤ 10 ms)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ T_A = 25°C (Note 2)
Operating and Storage Temperature Range
V_DSS
V_DGR
V_GS
V_GSM
I_D
I_D
I_DM
P_D
T_J, T_stg
100 Vdc
100 Vdc
± 15 Vdc
± 20 Vpk
6.0
3.9
18
50
0.4
1.75
−55 to
150
Adc
Apk
W
W/°C
W
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 25 Vdc, V_GS = 10 Vdc,
I_L = 6.0 Apk, L = 10 mH, R_G = 25 W)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
E_AS
180
mJ
R_qJC
R_qJA
R_qJA
T_L
°C/W
2.50
100
71.4
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR−4 board using the 0.5 sq.in. drain pad size.
http://onsemi.com
V_(BR)DSS
100 V
R_DS(on) TYP
660 mW
I_D MAX
6.0 A
P−Channel
D
G
S
MARKING DIAGRAM & PIN ASSIGNMENTS
4
12
3
DPAK
CASE 369C
STYLE 2
Gate 1
Drain 2
YWW
T6
P10EG
Source 3
4
Drain
Y
WW
T6P10E
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping^†
MTD6P10E
DPAK
75 Units/Rail
MTD6P10EG
DPAK
(Pb−Free)
75 Units/Rail
MTD6P10ET4
DPAK 2500 Tape & Reel
MTD6P10ET4G DPAK 2500 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 5
Publication Order Number:
MTD6P10E/D