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MTD6N15T4G Datasheet, PDF (1/6 Pages) ON Semiconductor – N−Channel Enhancement−Mode Silicon Gate
MTD6N15
Power Field Effect Transistor
DPAK for Surface Mount
N−Channel Enhancement−Mode Silicon Gate
This Power FET is designed for high speed, low loss power
switching applications such as switching regulators, converters,
solenoid and relay drivers.
Features
• Silicon Gate for Fast Switching Speeds
• Low RDS(on) — 0.3 W Max
• Rugged — SOA is Power Dissipation Limited
• Source−to−Drain Diode Characterized for Use With Inductive Loads
• Low Drive Requirement — VGS(th) = 4.0 V Max
• Surface Mount Package on 16 mm Tape
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Drain−Source Voltage
VDSS
150
Vdc
Drain−Gate Voltage (RGS = 1.0 MW)
VDGR
150
Vdc
Gate−Source Voltage
− Continuous
VGS
± 20
Vdc
− Non−Repetitive (tp ≤ 50 ms)
VGSM
± 40
Vpk
Drain Current − Continuous
Drain Current − Pulsed
ID
6.0
Adc
IDM
20
Total Power Dissipation @ TC = 25°C
PD
20
W
Derate above 25°C
0.16
W/°C
Total Power Dissipation @ TA = 25°C
PD
1.25
W
Derate above 25°C (Note 1)
0.01
W/°C
Total Power Dissipation @ TA = 25°C
(Note 1)
Derate above 25°C (Note 2)
PD
1.75
W
0.014
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg − 65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol Value
Unit
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
RqJC
RqJA
RqJA
°C/W
6.25
100
71.4
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size.
http://onsemi.com
V(BR)DSS
150 V
RDS(on) MAX
0.3 W
ID MAX
6.0 A
N−CHANNEL
D
G
S
4
12
3
CASE 369C
DPAK
(Surface Mount)
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENTS
4 Drain
1
3
Gate 2 Source
Drain
Y
WW
6N15
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
MTD6N15T4
MTD6N15T4G
DPAK
DPAK
(Pb−Free)
2500/Tape & Reel
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
1
May, 2013 − Rev. 5
Publication Order Number:
MTD6N15/D