MTD4N20E Datasheet, PDF (1/12 Pages) Motorola, Inc – TMOS POWER FET 4.0 AMPERES 200 VOLTS RDS(on) = 1.2 OHM

MTD4N20E
Preferred Device
Power MOSFET
4 Amps, 200 Volts
N−Channel DPAK
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition this advanced high voltage
MOSFET is designed to withstand high energy in the avalanche and
commutation modes. The energy efficient design also offers a
drain−to−source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−Source Voltage
V_DSS
200
Drain−Gate Voltage (R_GS = 1.0 MΩ)
V_DGR
200
Gate−Source Voltage
− Continuous
− Non−repetitive (t_p ≤ 10 ms)
V_GS
V_GSM
± 20
± 40
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (t_p ≤ 10 µs)
I_D
4.0
I_D
2.6
I_DM
12
Total Power Dissipation @ T_C = 25°C
Derate above 25°C
P_D
40
0.32
Total Power Dissipation @ T_A = 25°C (Note 2)
1.75
Operating and Storage Temperature Range
T_J, T_stg − 55 to
150
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
Watts
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 80 Vdc, V_GS = 10 Vdc,
I_L = 4.0 Apk, L = 10 mH, R_G = 25 Ω)
Thermal Resistance
− Junction to Case
− Junction to Ambient (Note 1)
− Junction to Ambient (Note 2)
Maximum Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
E_AS
80
mJ
R_θJC
R_θJA
R_θJA
T_L
°C/W
3.13
100
71.4
260
°C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size.
http://onsemi.com
V_(BR)DSS
200 V
R_DS(on) TYP
0.98 W
I_D MAX
4.0 A
N−Channel
D
G
4
4
S
12
3
1
2
3
CASE 369C
DPAK
(Surface Mount)
STYLE 2
CASE 369D
DPAK
(Straight Lead)
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENTS
4
Drain
4
Drain
1
Gate
2
Drain
3
Source
12 3
Gate Drain Source
Y
WW
4N20E
= Year
= Work Week
= Device Code
ORDERING INFORMATION
Device
Package
Shipping
MTD4N20E
DPAK
75 Units/Rail
MTD4N20E−1
DPAK
Straight Lead
75 Units/Rail
MTD4N20ET4
DPAK
2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2003
1
September, 2004 − Rev. XXX
Publication Order Number:
MTD4N20E/D