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MTD3055V Datasheet, PDF (1/12 Pages) Motorola, Inc – TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM
MTD3055V
Preferred Device
Power MOSFET
12 Amps, 60 Volts
N–Channel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 10 ms)
Drain Current – Continuous @ 25°C
Drain Current – Continuous @ 100°C
Drain Current – Single Pulse (tp ≤ 10 µs)
Total Power Dissipation @ 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C, when
mounted to minimum recommended pad
size
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
60
60
± 20
± 25
12
7.3
37
48
0.32
1.75
Operating and Storage Temperature
Range
TJ, Tstg –55 to
175
Single Pulse Drain–to–Source Avalanche
EAS
72
Energy – Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL = 12 Apk, L = 1.0 mH, RG = 25 Ω )
Thermal Resistance
– Junction to Case
RθJC
3.13
– Junction to Ambient
RθJA
100
– Junction to Ambient, when mounted to RθJA
71.4
minimum recommended pad size
Maximum Temperature for Soldering
Purposes, 1/8″ from case for 10
seconds
TL
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
Watts
°C
mJ
°C/W
°C
http://onsemi.com
12 AMPERES
60 VOLTS
RDS(on) = 150 mΩ
N–Channel
D
G
S
MARKING
DIAGRAM
4
12
3
Y
WW
T
CASE 369A
DPAK
STYLE 2
= Year
= Work Week
= MOSFET
YWW
T
3055V
PIN ASSIGNMENT
4
Drain
1 23
Gate Drain Source
ORDERING INFORMATION
Device
Package
Shipping
MTD3055V
MTD3055V1
DPAK
DPAK
75 Units/Rail
75 Units/Rail
MTD3055VT4
DPAK 2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
November, 2000 – Rev. 3
Publication Order Number:
MTD3055V/D