MTD2N50E Datasheet, PDF (1/12 Pages) Motorola, Inc – TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM

MTD2N50E
Preferred Device
Power MOSFET
2 Amps, 500 Volts
N−Channel DPAK
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition this advanced high voltage
MOSFET is designed to withstand high energy in the avalanche and
commutation modes. The energy efficient design also offers a
drain−to−source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Replaces MTD2N50
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−Source Voltage
Drain−Gate Voltage (R_GS = 1.0 MΩ)
Gate−Source Voltage
− Continuous
− Non−Repetitive (t_p ≤ 10 ms)
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (t_p ≤ 10 µs)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ T_A = 25°C, when
mounted to minimum recommended pad
size
V_DSS
V_DGR
V_GS
V_GSM
I_D
I_D
I_DM
P_D
500
500
± 20
± 40
2.0
1.5
6.0
40
0.32
1.75
Operating and Storage Temperature
Range
T_J, T_stg
−55 to
150
Single Pulse Drain−to−Source Avalanche
E_AS
100
Energy − Starting T_J = 25°C
(V_DD = 75 Vdc, V_GS = 10 Vdc,
I_L = 2.0 Apk, L = 50 mH, R_G = 25 Ω)
Thermal Resistance
− Junction to Case
− Junction to Ambient
− Junction to Ambient, when mounted
R_θJC
R_θJA
R_θJA
3.13
100
71.4
to minimum recommended pad size
Maximum Temperature for Soldering
Purposes, 1/8″ from case for 10
seconds
T_L
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
Watts
°C
mJ
°C/W
°C
http://onsemi.com
2 AMPERES
500 VOLTS
R_DS(on) = 3.6 Ω
N−Channel
D
G
S
MARKING
DIAGRAM
4
12
3
Y
WW
T
CASE 369A
DPAK
STYLE 2
= Year
= Work Week
= MOSFET
YWW
T
2N50E
PIN ASSIGNMENT
4
Drain
1 23
Gate Drain Source
ORDERING INFORMATION
Device
Package
Shipping
MTD2N50E
MTD2N50E1
DPAK
DPAK
75 Units/Rail
75 Units/Rail
MTD2N50ET4
DPAK 2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
1
August, 2004 − Rev. XXX
Publication Order Number:
MTD2N50E/D