MTD2955V Datasheet, PDF (1/10 Pages) Motorola, Inc – TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM

MTD2955V
Power MOSFET 12 A, 60 V
P−Channel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Features
• Avalanche Energy Specified
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Pb−Free Packages are Available
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (R_GS = 1.0 MW)
Gate−to−Source Voltage
− Continuous
− Non−repetitive (t_p ≤ 10 ms)
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (t_p ≤ 10 ms)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ 25°C (Note 2)
V_DSS
V_DGR
V_GS
V_GSM
I_D
I_D
I_DM
P_D
60
Vdc
60
Vdc
± 20
± 25
12
8.0
42
60
0.4
2.1
Vdc
Vpk
Adc
Apk
Watts
W/°C
Watts
Operating and Storage Temperature
Range
T_J, T_stg − 55 to
°C
175
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 25 Vdc, V_GS = 10 Vdc, Peak
I_L = 12 Apk, L = 3.0 mH, R_G = 25 W)
Thermal Resistance
− Junction to Case
− Junction to Ambient (Note 1)
− Junction to Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10
seconds
E_AS
R_qJC
R_qJA
R_qJA
T_L
216
mJ
°C/W
2.5
100
71.4
260
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using the 0.5 sq.in. pad size.
http://onsemi.com
12 A, 60 V
R_DS(on) = 185 mW (Typ)
P−Channel
D
G
S
4
12
3
DPAK−3
CASE 369C
STYLE 2
4
1
2
3
DPAK−3
CASE 369D
STYLE 2
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 7 of this data sheet.
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2004
1
April, 2004 − Rev. 7
Publication Order Number:
MTD2955V/D