MTD2955E Datasheet, PDF (1/11 Pages) Motorola, Inc – TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM

MTD2955E
Power Field Effect
Transistor DPAK for Surface
Mount
P−Channel Enhancement−Mode Silicon
Gate
This advanced MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The new energy efficient design
also offers a drain−to−source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power
supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Surface Mount Package Available in 16 mm, 13 inch /
2500 Unit Tape & Reel, Add T4 Suffix to Part Number
• Replaces the MTD2955
http://onsemi.com
POWER FET
12 AMPERES
60 VOLTS
R_DS(on) = 0.3 W
D
G
S
MARKING
DIAGRAM
DPAK
SUFFIX
CASE 369A
Style 2
YWW
T2955E
T2955E
Y
WW
= Specific Device Code
= Year
= Work Week
ORDERING INFORMATION
Device
MTD2955ET4
Package
DPAK
Shipping†
2500/ Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
1
May, 2013 − Rev. 8
Publication Order Number:
MTD2955E/D