MTD20N06V Datasheet, PDF (1/7 Pages) Motorola, Inc – TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

MTD20N06V
Power Field Effect
Transistor
N−Channel DPAK
This device is a new technology designed to achieve an
on−resistance area product about one−half that of standard MOSFETs.
This new technology more than doubles the present cell density of our
50 and 60 V devices. This device is designed to withstand high energy
in the avalanche and commutation modes. Designed for low voltage,
high speed switching applications in power supplies, converters and
power motor controls, these devices are particularly well suited for
bridge circuits where diode speed and commutating safe operating
areas are critical and offer additional safety margin against unexpected
voltage transients.
Features
• On−resistance Area Product about One−half that of Standard
MOSFETs with New Low Voltage, Low R_DS(on) Technology
• Faster Switching than Predecessors
• Avalanche Energy Specified
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Surface Mount Package Available in 16 mm 13−inch/2500 Unit Tape
& Reel, Add T4 Suffix to Part Number
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (R_GS = 1.0 MΩ)
Gate−to−Source Voltage − Continuos
− Non−repetitive (t_p ≤ 10 ms)
Drain Current − Continuous
− Continuous @ 100°C
− Single Pulse (t_p ≤ 10 μs)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ 25°C (Note 2)
V_DSS
V_DGR
V_GS
V_GSM
I_D
I_D
I_DM
P_D
60
60
± 20
± 25
20
13
70
60
0.4
2.1
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
Watts
Operating and Storage Temperature Range T_J, T_stg −55 to °C
175
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 25 Vdc, V_GS = 10 Vdc, Peak I_L =
20 Apk, L = 1.0 mH, R_G = 25 Ω)
Thermal Resistance − Junction to Case
− Junction to Ambient (Note 1)
− Junction to Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
E_AS
200
mJ
R_θJC
R_θJA
R_θJA
T_L
2.5 °C/W
100
71.4
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size.
http://onsemi.com
V_(BR)DSS
60 V
R_DS(on) TYP
65 mW
I_D MAX
20 A
N−Channel
D
G
S
MARKING
DIAGRAM
4
4
Drain
12
3
DPAK
CASE 369C
(Surface Mount)
Style 2
2
1 Drain 3
Gate
Source
T20N06V = Device Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping^†
MTD20N06V
MTD20N06VT4
DPAK
DPAK
75 Units/Rail
2500 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
1
May, 2013 − Rev. 5
Publication Order Number:
MTD20N06V/D