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MTD20N06HDL Datasheet, PDF (1/8 Pages) Motorola, Inc – TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM | |||
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MTD20N06HDL
Preferred Device
Power MOSFET
20 Amps, 60 Volts, Logic Level
NâChannel DPAK
This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drainâtoâsource diode with a fast
recovery time. Designed for lowâvoltage, highâspeed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits, and
inductive loads. The avalanche energy capability is specified to
eliminate the guesswork in designs where inductive loads are
switched, and to offer additional safety margin against unexpected
voltage transients.
Features
⢠Avalanche Energy Specified
⢠SourceâtoâDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
⢠Diode is Characterized for Use in Bridge Circuits
⢠IDSS and VDS(on) Specified at Elevated Temperature
⢠PbâFree Package is Available
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
DrainâSource Voltage
DrainâGate Voltage (RGS = 1.0 MW)
VDSS
60
VDGR
60
GateâSource Voltage
â Continuous
â NonâRepetitive (tp ⤠10 ms)
Drain Current â Continuous @ 25°C
Drain Current â Continuous @ 100°C
Drain Current â Single Pulse (tp ⤠10 ms)
VGS
VGSM
ID
ID
IDM
± 15
± 20
20
12
60
Total Power Dissipation
Derate above 25°C
PD
40
0.32
Total Power Dissipation @ TC = 25°C (Note 1)
1.75
Operating and Storage Temperature Range
TJ, Tstg â 55 to
150
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
W
W/°C
W
°C
Single Pulse DrainâtoâSource Avalanche
Energy â Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL = 20 Apk, L = 1.0 mH, RG = 25 W)
Thermal Resistance
â JunctionâtoâCase
â JunctionâtoâAmbient (Note 1)
â JunctionâtoâAmbient (Note 2)
Maximum Temperature for Soldering
Purposes, 1/8â³ from case for 10 seconds
EAS
mJ
200
°C/W
RJC
3.13
RJA
100
RJA
71.4
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FRâ4 board using the minimum recommended
pad size.
2. When surface mounted to an FRâ4 board using the 0.5 sq.in. drain pad size.
http://onsemi.com
20 AMPERES, 60 VOLTS
RDS(on) = 45 mW
NâChannel
D
G
S
MARKING DIAGRAM & PIN ASSIGNMENTS
4
12
3
DPAK
CASE 369C
STYLE 2
Gate 1
Drain 2
YWW
20N
06HLG
Source 3
4
Drain
Y
WW
20N06HL
G
= Year
= Work Week
= Device Code
= PbâFree Package
ORDERING INFORMATION
Device
Package
Shippingâ
MTD20N06HDL
DPAK
75 Units/Rail
MTD20N06HDLT4 DPAK 2500 Tape & Reel
MTD20N06HDLT4G DPAK 2500 Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 â Rev. 6
Publication Order Number:
MTD20N06HDL/D
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