MTD20N06HD Datasheet, PDF (1/11 Pages) Motorola, Inc – TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

MTD20N06HD
Preferred Device
Power MOSFET
20 Amps, 60 Volts
N−Channel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. This energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−Source Voltage
Drain−Gate Voltage (R_GS = 1.0 MΩ)
Gate−Source Voltage
− Continuous
− Non−Repetitive (t_p ≤ 10 ms)
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (t_p ≤ 10 μs)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ T_A = 25°C
(Note 2)
Operating and Storage Temperature
Range
V_DSS
V_DGR
V_GS
V_GSM
I_D
I_D
I_DM
P_D
60
Vdc
60
Vdc
± 20
Vdc
± 30
Vpk
20
Adc
16
60
Apk
40
Watts
0.32 W/°C
1.75 Watts
T_J, T_stg − 55 to
°C
150
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 25 Vdc, V_GS = 10 Vdc, Peak
I_L = 20 Apk, L = 0.3 mH, R_G = 25 Ω)
Thermal Resistance
− Junction to Case
− Junction to Ambient (Note 1)
− Junction to Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10
seconds
E_AS
R_θJC
R_θJA
R_θJA
T_L
60
mJ
°C/W
3.13
100
71.4
260
°C
1. When surface mounted to an FR−4 board using the minimum
recommended pad size.
2. When surface mounted to an FR−4 board using the 0.5 sq.in. drain pad size.
http://onsemi.com
V_(BR)DSS
60 V
R_DS(on) TYP
35 mW@10 V
I_D MAX
20 A
(Note 1)
N−Channel
D
G
4
12
3
DPAK
CASE 369C
Style 2
4
S
MARKING DIAGRAMS
4
Drain
1
Gate
2
Drain
3
Source
4
Drain
1
2
3
DPAK
CASE 369D
Style 2
20N06HD Device Code
Y
= Year
WW
= Work Week
12 3
Gate Drain Source
ORDERING INFORMATION
Device
Package
Shipping
MTD20N06HD
DPAK
MTD20N06HD−1
DPAK
Straight Lead
75 Units/Rail
75 Units/Rail
MTD20N06HDT4 DPAK 2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 5
Publication Order Number:
MTD20N06HD/D