MTD20N03HDLT Datasheet, PDF (1/9 Pages) ON Semiconductor – Power MOSFET 20 Amps, 30 Volts, Logic Level

MTD20N03HDL
Preferred Device
Power MOSFET
20 Amps, 30 Volts, Logic Level
N−Channel DPAK
This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. This energy efficient
design also offers a drain−to−source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power
supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
Features
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Pb−Free Packages are Available
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−Source Voltage
V_DSS
30
Drain−Gate Voltage (R_GS = 1.0 MW)
V_DGR
30
Gate−Source Voltage
− Continuous
− Non−Repetitive (t_p ≤ 10 ms)
V_GS
V_GSM
±15
± 20
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (t_p ≤ 10 ms)
I_D
20
I_D
16
I_DM
60
Total Power Dissipation
Derate above 25°C
P_D
74
0.6
Total Power Dissipation @ T_C = 25°C (Note 2)
1.75
Operating and Storage Temperature Range
T_J, T_stg − 55 to
150
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
W
W/°C
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 25 Vdc, V_GS = 5.0 Vdc, Peak
I_L = 20 Apk, L = 1.0 mH, R_G = 25 W)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
E_AS
200
mJ
R_qJC
R_qJA
R_qJA
T_L
°C/W
1.67
100
71.4
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR−4 board using the minimum recommended
pad size.
2. When surface mounted to an FR−4 board using the 0.5 sq.in. drain pad size.
http://onsemi.com
V_(BR)DSS
30 V
R_DS(on) TYP
30 mW@5.0 V
I_D MAX
20 A
(Note 1)
N−Channel
D
G
S
MARKING DIAGRAM & PIN ASSIGNMENTS
4
12
3
DPAK
CASE 369C
STYLE 2
1 Gate
2 Drain
3 Source
YWW
20N
03HLG
4
Drain
4
1 Gate
1
2
3
DPAK
CASE 369D
STYLE 2
2
Drain
3 Source
YWW
20N
03HL
4
Drain
Y
= Year
WW
= Work Week
20N03HL = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
June, 2006 − Rev. 6
Publication Order Number:
MTD20N03HDL/D